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A weak absorption line at 737 nm, due to traces of silicon (Zaitzev, 2001, pp. 174181), was observed in four samples. UV-Vis-NIR. Most of the samples tested displayed a smooth, gradual increase in absorption from about 500 nm toward the blue end of the spectrum. In general, the stronger brown coloration corresponded to an increase in this

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A weak absorption line at 737 nm, due to traces of silicon (Zaitzev, 2001, pp. 174181), was observed in four samples. UV-Vis-NIR. Most of the samples tested displayed a smooth, gradual increase in absorption from about 500 nm toward the blue end of the spectrum. In general, the stronger brown coloration corresponded to an increase in this

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Silicon Carbide - Structure, Properties, and Uses of SiC. Many compound materials exhibit polymorphism, that is they can exist in different structures called polymorphs.Silicon carbide (SiC) is unique in this regard as more than 250 polymorphs of silicon carbide had been identified by 2006, with some of them having a lattice constant as long as 301.5 nm, about one thousand times the usual SiC

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Silicon Carbide - Structure, Properties, and Uses of SiC. Many compound materials exhibit polymorphism, that is they can exist in different structures called polymorphs.Silicon carbide (SiC) is unique in this regard as more than 250 polymorphs of silicon carbide had been identified by 2006, with some of them having a lattice constant as long as 301.5 nm, about one thousand times the usual SiC

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Silicon Carbide - Structure, Properties, and Uses of SiC. Many compound materials exhibit polymorphism, that is they can exist in different structures called polymorphs.Silicon carbide (SiC) is unique in this regard as more than 250 polymorphs of silicon carbide had been identified by 2006, with some of them having a lattice constant as long as 301.5 nm, about one thousand times the usual SiC

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Silicon Carbide - Structure, Properties, and Uses of SiC. Many compound materials exhibit polymorphism, that is they can exist in different structures called polymorphs.Silicon carbide (SiC) is unique in this regard as more than 250 polymorphs of silicon carbide had been identified by 2006, with some of them having a lattice constant as long as 301.5 nm, about one thousand times the usual SiC

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1.1.2 Peculiarities of silicon carbide wafers Silicon carbide bulk crystals (SiC boules) are usually grown along the direction from a seed crystal using the sublimation growth technique, which was first introduced by Lely in 1955 [8] and later optimized by Tairov and Tsvetkov (modified Lely method) [9, 10].

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